Numerical study on light triggering characteristics of NiO/SiC heterojunction thyristor

In this paper, the performance of silicon carbide (SiC) light-triggered thyristor (LTT) with a p-type NiO emitter region is analyzed through numerical simulation. The conductivity modulation in SiC LTT significantly enhanced help high injection efficiency holes NiO/SiC heterojunction. injected hole density at surface p− long base increased by ∼21.2 times and corresponding specific on-state resistance (Ron,sp) only 36.7 mΩ cm2, which reduced about 29%. Moreover, hole-injection enhancement heterojunction also exhibits excellent potential improving dynamic characteristics LTTs. simulation results indicate that turn-on time can be ∼57.76% when triggered 1.0 W/cm2 ultraviolet light. Furthermore, energy dissipations during turn-off processes 91.4% 21.9%, respectively.